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Vallery Stanishev

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 210
Temperature-dependent electron effective mass in bulk GaN revealed by terahertz optical Hall effect
Characterization, Electronic devices
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 230
Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures
Characterization, Novel Materials and Nanostructures