Dr. Marcin Siekacz

Weitere Beteiligungen

• 10.10.2022

  16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 021

  Quantum confined Stark Effect screening efficiency induced by the optical excitation in symmetric double InGaN/GaN quantum wells – role of barrier width and temperature

   Characterization, Optical devices
• 11.10.2022

  • Poster Presentation
  • PP 276

  Superconducting NbN contact to III-Nitride LED

   Novel Materials and Nanostructures, Optical devices
• 12.10.2022

  • Poster Presentation
  • PP 393

  High temperature growth of InGaN in plasma assisted molecular beam epitaxy – a path towards improvement of quantum efficiency

   Growth, Optical devices
• 12.10.2022

  • Poster Presentation
  • PP 328

  Polarization-induced optical thyristor based on III-Nitrides

   Electronic devices, Optical devices
• 12.10.2022

  15:15 – 15:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 155

  Electrochemical etching of p-type GaN

   Characterization, Novel Materials and Nanostructures
• 12.10.2022

  15:15 – 15:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 163

  Blue laser diodes with nanoporous bottom cladding – device fabrication and properties

   Characterization, Optical devices