IWN 2022

International Workshop on Nitride Semiconductors 2022

Diffusion analysis of charge carriers in InGaN/GaN heterostructures using micro-photoluminescence

Optical devices

Transport

Abstract Talk

Characterization

Spatial and temperature variation of the Huang-Rhys factor in InGaN quantum wells

Poster Presentation

Organic-inorganic PEDOT/nitride heterojunctions for 3D micro-LEDs

Novel Materials and Nanostructures

Salon Vienna

UV LEDs : performance

Session

Chair

Lunch Symposium

Industrial Session

Welcome and brief introduction to IPCEI

Industrial Talk

Industrial Speaker

Panel discussion

New technologies often allow energy savings, possibly huge energy savings by offering way higher efficiencies. However, in reality the energy savings are considerably smaller than expected due to the societal response to a new technology. What is the case of GaN technologies? GaN has enabled the solid state lighting revolution. In the rump sessions we’ll assess the actual amplitude of these savings. For power electronics and the RF market, GaN is on the brink of becoming the major technology with the expectation to provide more energy efficient power conversion and communications. Are there side effects to expect and can we predict the societal response which is one of the most important parameters that determines the energy consumption?<br><br>Panelists include experts in GaN technologies for lighting and power electronics and RF electronics, and speakers more involved in the usage and societal aspects related to technology.

Room Berlin

Energy savings allowed by GaN technologies: myth or reality?

Rump Session

Discussion

Martin Strassburg

Vorsitz

Industrial Speaker

Vortrag

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