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Heiji Watanabe

Osaka University / JP

Osaka University

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 035
Evaluation of hole trap density at SiO₂/GaN MOS interfaces through capacitance-voltage measurements under ultraviolet light illumination
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO₂/GaN MOS devices by sputter deposition of SiO₂ combined with post annealing processes
Characterization, Electronic devices
12.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 158
Control of oxidation and reduction reactions at SiO₂/GaN interfaces towards high performance and reliability GaN MOSFETs
Characterization, Electronic devices