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IWN 2022
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Takuma Kobayashi
Osaka University / JP
Osaka University
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Datum
Vortrag
10.10.2022
Poster Presentation
PP 035
Evaluation of hole trap density at SiO
2
/GaN MOS interfaces through capacitance-voltage measurements under ultraviolet light illumination
Characterization, Electronic devices
12.10.2022
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 158
Control of oxidation and reduction reactions at SiO
2
/GaN interfaces towards high performance and reliability GaN MOSFETs
Characterization, Electronic devices
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 035
Evaluation of hole trap density at SiO
2
/GaN MOS interfaces through capacitance-voltage measurements under ultraviolet light illumination
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 252
Fabrication of stable and low leakage SiO
2
/GaN MOS devices by sputter deposition of SiO
2
combined with post annealing processes
Characterization, Electronic devices
12.10.2022
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 158
Control of oxidation and reduction reactions at SiO
2
/GaN interfaces towards high performance and reliability GaN MOSFETs
Characterization, Electronic devices
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