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Professor Dipankar Saha

Indian Institute of Technology Bombay / IN

Indian Institute of Technology Bombay

Vortrag

11.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 099
Thermally grown Nb-oxide for GaN-based MOS-HEMTs
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 082
Power dependent dynamic modulation of InGaN quantum dot effective diameter – a controlled phenomena revealed through ultrafast transient absorption spectroscopy
Characterization, Novel Materials and Nanostructures
11.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 099
Thermally grown Nb-oxide for GaN-based MOS-HEMTs
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 226
Carrier dynamics in InGaN/GaN quantum wells – observation of delayed excited-state kinetics using femtosecond absorption spectroscopy
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 243
Programmable threshold voltage AlGaN/GaN MIS-HEMTs with triple layer gate dielectric
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 299
InGaN/GaN nanowire mesh for highly efficient light emitters
Novel Materials and Nanostructures, Optical devices
12.10.2022
Poster Presentation
PP 319
Near-zero temperature coefficient of resistance for TaN resistors on GaN substrate
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 394
Reduction in effective diameter of GaN quantum dots from radial confinement
Novel Materials and Nanostructures, Optical devices
12.10.2022
Poster Presentation
PP 366
Non-linear carrier dynamics in MBE-grown InGaN nanowires emitting in green region
Characterization, Novel Materials and Nanostructures