.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Jaime Freita Jr.

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 115
Detailed microstructural analysis of defects in 25mm thick GaN homo-epitaxial layers and varying substrates
Characterization, Growth
11.10.2022
Poster Presentation
PP 139
Progress in novel co-doping moieties to achieve enhanced P-type doping in GaN by ion implantation
Electronic devices, Novel Materials and Nanostructures
14.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 259
GaN homoepitaxial growth and substrate-dependent effects for vertical power devices
Characterization, Growth