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Dr. Noritoshi Maeda

RIKEN / JP

RIKEN

Redner

11.10.2022
Poster Presentation
PP 300
Remarkable increase of injection efficiency in AlGaN Far-UV LEDs and UVB LDs using polarization doped p-layers activated by remote accepter
Optical devices, Growth
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 240
232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer
Optical devices, Growth

Weitere Beteiligungen als Autor

11.10.2022
Poster Presentation
PP 197
Current injection emission by high current density over 300 kA/cm² from 280 nm LD structure using polarization doped p-cladding layer
Optical devices, Growth
11.10.2022
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 081
High temperature stimulated emission from AlGaN UV-C multiple quantum wells
Optical devices, Characterization
11.10.2022
Poster Presentation
PP 300
Remarkable increase of injection efficiency in AlGaN Far-UV LEDs and UVB LDs using polarization doped p-layers activated by remote accepter
Optical devices, Growth
12.10.2022
17:45 – 18:00 12 Min. 3 Min.
Abstract Talk
AT 188
Effects of Mg doping into the core layer in AlGaN deep-UV LD structures
Optical devices, Electronic devices
14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 239
15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern
Optical devices, Characterization
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 240
232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer
Optical devices, Growth