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Professor Per O. Å. Persson

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 153
Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers
Characterization, Growth
11.10.2022
Poster Presentation
PP 265
Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures
Characterization, Growth
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
14.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 229
Spectroscopic and high-resolution identification of Mg causing GaN pyramidal inversion domains limiting p-type doping
Characterization, Growth