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Yasushi Iwaisako

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 197
Current injection emission by high current density over 300 kA/cm² from 280 nm LD structure using polarization doped p-cladding layer
Growth, Optical devices
11.10.2022
Poster Presentation
PP 300
Remarkable increase of injection efficiency in AlGaN Far-UV LEDs and UVB LDs using polarization doped p-layers activated by remote accepter
Growth, Optical devices
14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 239
15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern
Characterization, Optical devices
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 240
232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer
Growth, Optical devices