Abstract text (incl. figure legends and references)

Introduction:

In contrast to time-consuming conventional TEM-specimen preparation methods, the focused ion beam (FIB) sputtering in a dual beam SEM system allows to produce high-quality specimens for various TEM studies automatically and quickly. Different TEM based techniques require specific considerations during the specimen preparation.

Objectives:

In this work, we discuss three special FIB preparation methods: cutting of the electron beam shaping device from a bulk sample, preparation of the Ga ion beam sensitive nanotube cross-section and transport of the SiN-Membrane with magnetic structure on the surface.

Materials and methods:

For the preparation of specimens, we used focused Ga ion beams in FEI Helios dual-beam scanning electron microscopes.

Results:

Figure 1 shows the beam-shaping device for off-axis measurement of the phase shift around the vertical current. The U-shape cross-section TEM lamella of a Ga ion beam sensitive nanotube can be seen in the figure 2. Figure 3 illustrates the cross-section TEM lamella of the magnetic structure on the surface of a SiN membrane.

Focused Ga ion beam sputtering is used to prepare high quality electron transparent specimens for different TEM experiments as well as to prepare some non-conventional specimens considering desired geometry, topology and material beam sensitivity.