Poster Session 3
Novel Materials and Nanostructures

Programme

• • Poster Presentation
  • PP 273

  Optimization of GaN-based topological photonic insulator cladding structure-membrane, slab and bulk type structure

  • Professor Akihiko Kikuchi (Sophia University / JP)

   Novel Materials and Nanostructures, Optical devices
• • Poster Presentation
  • PP 274

  Nanoporous GaN as a template for electrodeposition and sputtering of nickel and its effects on resulting magnetic properties

  • Professor Yonatan Calahorra (Technion - IIT / IL)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 275

  Passivating surface states in GaN thanks to two-dimensional MoS₂ coating

  • Danxuan Chen (Ecole Polytechnique Fédérale de Lausanne (EPFL) / CH)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 276

  Superconducting NbN contact to III-Nitride LED

  • Mikołaj Chlipała (Polish Academy of Sciences / PL)

   Novel Materials and Nanostructures, Optical devices
• • Poster Presentation
  • PP 277

  Direct high-temperature growth of GaN on ScAlMgO₄ substrates

  • Alessandro Floriduz (EPFL / CH)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 278

  Surface charges effects in GaN NWs – influence on the electromechanical conversion properties

  • Dr. Noëlle Gogneau (Center for Nanosciences and Nanotechnologies, C2N/CNRS/Paris-Saclay University / FR)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 279

  Ionic-covalent atomistic studies of extended defects in GaN with self-consistent charge transfer

  • Prof. Dr. Roman Gröger (Czech Academy of Sciences / CZ)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 280

  Monocrystalline Ga(Al)NAs layers grown by MOVPE with up to 6% As

  • Professor Detlef Hommel (Łukasiewicz Research Network - PORT Polish Center for Technology Development / PL)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 281

  The roles of silane flow in self-assembled GaN nanowire growth

  • Dr. Nian Jiang (Univeristy of Cambridge / GB)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 283

  Modelling of interfacial energies and strains in InN/GaN short period superstructures

  • Professor Philomela Komninou (Aristotle University of Thessaloniki / GR)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 284

  The effect of Be doping concentration on thermal conductivity of p-type AlN thin films

  • Anusha Krishnan (Georgia Institute of Technology / US)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 285

  Defects in 10-13 GaN – an electron microscopy study

  • Dr. Gunnar Kusch (University of Cambridge / GB)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 286

  Mid-infrared thermal emission from GaN/Au and GaN/n⁺⁺-GaN micro-grating structures

  • Professor Yoshihiro Ishitani (Chiba University / JP)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 287

  Be-doped Al_xGa_1-xN grown by metalorganic chemical vapor deposition

  • Vincent Meyers (SUNY Polytechnic Institute / US)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 288

  AlGaN nanoflower array for high-performance UV photodetector

  • Jeong-Kyun Oh (Jeonbuk National University / KR)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 289

  Wide bandgap p-type MnO quantum dots for III-nitride devices

  • Professor Iman Roqan (King Abdullah University of Science and Technology / SA)

   Novel Materials and Nanostructures, Optical devices
• • Poster Presentation
  • PP 290

  What triggers epitaxial growth of GaN nanowires on graphene?

  • Dr. Maria Tchernycheva (C2N-CNRS, Univ. Paris Saclay / FR)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 291

  Al composition dependence of AlGaN barrier layer in InGaN-based nanocolumns with red emission semipolar MQWs

  • Dr. Jumpei Yamada (Sophia University / JP)

   Growth, Novel Materials and Nanostructures