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Abstract Talk
AT 006

Controlled epitaxial growth of atomically thin h-BN on graphene using defect engineering

Appointment

Date: 10/10/2022

Time: 14:30 – 14:45

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon London

Session

Growth of h-BN

Topics

Growth
Novel Materials and Nanostructures

Authors

Dr. Neha Aggarwal (Paul-Drude Institut für Festkörperelektronik / DE), Victor Deinhart (Ferdinand-Braun Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany / DE), Martin Heilmann (Paul-Drude Institut für Festkörperelektronik / DE), Dr. Katja Höflich (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH / DE), Dr. João Marcelo J. Lopes (Paul-Drude Institut für Festkörperelektronik / DE)