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IWN 2022
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Professor Mike Leszczyński
Polish Institute of Science / PL
Polish Institute of Science
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10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
Further involvements
10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
11/10/2022
Poster Presentation
PP 125
Comparison of the crystal quality of InGaN/GaN multiple quantum wells grown on sapphire and GaN substrate using X-ray diffraction
Characterization, Growth
11/10/2022
Poster Presentation
PP 164
Summary of studies on the effect of H
2
used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11/10/2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In
0.125
Ga
0.875
N/GaN and In
0.25
Ga
0.75
N/GaN interfaces
Characterization, Growth
12/10/2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
13/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
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