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Dr. Tim Wernicke

Technische Universität Berlin / DE

Technische Universität Berlin

Further involvements

  • –   
    • Abstract Talk
    • AT 033
    Influence of detuning and surface roughness on the lasing threshold of optically pumped UVB VCSELs
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 057
    Temperature dependent electroluminescence spectroscopy on AlGaN-based 235nm far-UVC LEDs with different active region growth temperatures
     Characterization, Electronic devices
    • Poster Presentation
    • PP 120
    Electrical compensation in aluminum rich Si-doped 90% AlGaN determined by positron annihilation and X-ray absorption spectroscopy
     Characterization, Growth
    • Poster Presentation
    • PP 198
    Single-mode lasing in optically pumped UVB VCSELs with circular relief structures
     Characterization, Optical devices
    • Poster Presentation
    • PP 202
    Ohmic Pd-based p-contacts on p-GaN for UVC-LEDs
     Characterization, Optical devices
    • Poster Presentation
    • PP 196
    Toward membrane-based UV-emitters with tunnel junctions
     Characterization, Optical devices
    • Poster Presentation
    • PP 214
    Observation of novel orientations in an AlN thin film grown on m-plane sapphire using electron backscatter diffraction
     Characterization, Growth
    • Poster Presentation
    • PP 295
    Threshold and gain measurements of optically pumped UVC lasers with single quantum well active region
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 120
    Radiative recombination and current injection efficiencies in deep UV LEDs grown on AlN/sapphire substrates with different defect densities
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 113
    Core-shell AlGaN nanorods as ultraviolet Light Emitting Diodes
     Novel Materials and Nanostructures, Optical devices
  • –   
    • Abstract Talk
    • AT 122
    Uncovering the role of point defects in the exponential EQE decrease inUVC LEDs emitting below 240 nm
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 139
    Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 142
    Operation-induced degradation of violet emitting InGaN-based laser diodes characterized by Hakki-Paoli method
     Characterization, Optical devices
    • Poster Presentation
    • PP 309
    Electron beam induced currents in AlGaN UVC LEDs
     Characterization, Optical devices
    • Poster Presentation
    • PP 398
    Spectrally pure far-UVC LED irradiation system for skin-tolerant inactivation of multi-resistant pathogens
     Characterization, Optical devices
    • Poster Presentation
    • PP 312
    Growth of UVB tunnel-junction LEDs – impact of GaN interlayer thickness on morphology and electro-optical characteristics
     Characterization, Growth
    • Poster Presentation
    • PP 310
    Understanding ohmic contact formation of V/Al/Ni/Au to Al-rich n-AlGaN
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 222
    UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
     Electronic devices, Growth
  • –   
    • Abstract Talk
    • AT 225
    Deep UV‑LEDs with emission around 230 nm grown on single crystal AlN substrates
     Electronic devices, Growth
  • –   
    • Abstract Talk
    • AT 241
    Development of AlGaN-based far-ultraviolet-C LEDs and their applications
     Characterization, Optical devices
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