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IWN 2022
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Professor Michał Leszczyński
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Date
Further involvements
10/10/2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 002
Origin of anisotropy in partially relaxed InGaN layers and the procedure for strain state analysis
Characterization, Growth
10/10/2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
11/10/2022
Poster Presentation
PP 259
Influence of structural defects in the In
0.3
Ga
0.7
N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11/10/2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
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