Session – Characterization
AlGaN DUV emitters-2

Programm

• 15:30 – 15:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 079

  A combination of ion implantation and high temperature annealing – the origin of the 265 nm absorption in AlN

  • Lukas Peters (TU Braunschweig / DE)

   Characterization, Growth
• 15:45 – 16:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 080

  Reduction of the lasing threshold in AlGaN/GaN graded-index separate confinement heterostructures

  • Sergi Cuesta-Arcos (CEA/IRIG/PHELIQS / FR)

   Characterization, Optical devices
• 16:00 – 16:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 081

  High temperature stimulated emission from AlGaN UV-C multiple quantum wells

  • Dr. Hideaki Murotani (National Institute of Technology, Tokuyama College / JP)

   Characterization, Optical devices
• 16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 082

  Directly observing growth related defects and compositional fluctuations in facet controlled epitaxial lateral overgrowth (FACELO) lasers

  • Dr. J. Houston Dycus (Eurofins EAG / US)

   Characterization, Growth