.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Session

Session – Novel Materials & Nanostructures
Remote epitaxy

Termin

Datum: 13.10.2022

Zeit: 10:30 – 12:00

Ort / Stream:

Chair

Programm

10:30 – 11:00 25 Min. 5 Min.
Invited Talk
IT 56
Remote epitaxy for ultimate heterogeneous integration of compound semiconductors
Prof. Dr. Jeehwan Kim (Massachusetts Institute of Technology / US)
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 210
Stability of 2D material on the substrate – the pathway realizing Ⅲ-nitride remote epitaxy
Dr. Jeong-Hwan Park (Nagoya University / JP)
Novel Materials and Nanostructures
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 211
Remote epitaxy of GaN via graphene on GaN / sapphire templates
Dr. Tadas Malinauskas (Vilnius University / LT)
Growth, Novel Materials and Nanostructures
11:30 – 12:00 25 Min. 5 Min.
Invited Talk
IT 68
Selective area growth of III-Nitrides on h-BN platform
Dr. Suresh Sundaram (Georgia Tech Lorraine / FR)
Growth, Novel Materials and Nanostructures