Session – Optical Devices
230nm UV-1

Programm

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 63

  High output power Far-UVC LEDs emitting below 230 nm on AlN substrates

  • Dr. Hirotsugu Kobayashi (Asahi Kasei Corporation / JP)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 238

  Influence of template and p-side design on the performance of 234 nm far ultraviolet-C light emitting diodes

  • Dr. Tim Kolbe (Ferdinand-Braun-Institut (FBH) / DE)

   Optical devices
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 239

  15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern

  • Professor Hideki Hirayama (RIKEN Cluster for Pioneering Research (CPR) / JP)

   Optical devices, Characterization
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 240

  232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer

  • Dr. Noritoshi Maeda (RIKEN / JP)

   Optical devices, Growth
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 241

  Development of AlGaN-based far-ultraviolet-C LEDs and their applications

  • Dr. Martin Guttmann (Ferdinand-Braun-Institut / DE)

   Optical devices, Characterization