Session – Novel Materials & Nanostructures
Growth of III-Nitride materials

Programm

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 49

  MBE growth of cubic boron aluminum nitride (c-BAlN) epitaxial layers

  • Dr. Kazuyuki Hirama (NTT Basic Research Laboratories, NTT Corporation / JP)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 193

  Influence of nucleation schemes on crystal quality of heteroepitaxial Sc_0.4Al_0.6N grown by molecular beam epitaxy

  • Dr. Jennifer Hite (US Naval Research Laboratory / US)

   Novel Materials and Nanostructures, Growth
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 194

  Al_1-xGa_xP_yN_1-y – a new member of the III-Nitride family

  • Professor Markus Pristovsek (Nagoya University / JP)

   Novel Materials and Nanostructures, Growth
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 195

  Optical properties of the AlScN ternary system

  • Jona Grümbel (Otto-von-Guericke-Universität Magdeburg / DE)

   Novel Materials and Nanostructures, Characterization
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 196

  Promising physical phenomena in epitaxial ScxAl1-xN – enhanced dielectric and ferroelectric behavior

  • Dr. Joseph Casamento (Cornell University / US)

   Novel Materials and Nanostructures, Growth