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Poster Presentation
PP 031

Comparison of heavily-doped GaN regrowth methods for non-alloyed low ohmic contact resistance with N-polar GaN HEMT

Termin

Datum: 10.10.2022

Zeit: 17:30 – 17:30

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Electronic devices
Growth

Mitwirkende

Dr. Takahide Hirasaki (Sumitomo Electric Industries / JP), Akihiro Hayasaka (Sumitomo Electric Industries / JP), Dr. Masaya Okada (Sumitomo Electric Industries / JP), Isao Makabe (Sumitomo Electric Industries / JP), Yukihiro Tsuji (Sumitomo Electric Industries / JP), Dr. Kozo Makiyama (Sumitomo Electric Industries / JP), Ken Nakata (Sumitomo Electric Industries / JP)