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Jaeyoung Baik

Gwangju Institute of Science and Technology / KR

Gwangju Institute of Science and Technology

Vortrag

10.10.2022
Poster Presentation
PP 070
Study of epitaxial lateral overgrowth of stress-relaxed GaN with graphene mask fabricated by selective O₂ ashing
Growth, Novel Materials and Nanostructures

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 070
Study of epitaxial lateral overgrowth of stress-relaxed GaN with graphene mask fabricated by selective O₂ ashing
Growth, Novel Materials and Nanostructures
11.10.2022
Poster Presentation
PP 263
Effects of graphene defect on growth modes of GaN on graphene / sapphire substrate
Characterization, Growth
11.10.2022
Poster Presentation
PP 261
Remote heteroepitaxy of GaN on single-layer graphene/AlN using metal-organic chemical vapor deposition
Growth, Optical devices