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Dr. Joff Derluyn

Weitere Beteiligungen

10.10.2022
14:30 – 14:45 12 Min. 3 Min.
Abstract Talk
AT 008
Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field
Electronic devices, Novel Materials and Nanostructures
12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Characterization, Electronic devices