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Timothy Stamm

Georgia Institute of Technology / US

Georgia Institute of Technology

Vortrag

12.10.2022
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Electronic devices, Growth

Weitere Beteiligungen

12.10.2022
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Characterization, Growth
12.10.2022
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Electronic devices, Growth