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Dr. Oliver Brandt

Paul-Drude-Institut / DE

Paul-Drude-Institut

Weitere Beteiligungen

  • –   
    • Abstract Talk
    • AT 027
    A route for the top-down fabrication of ordered GaN nanowires with ultrathin diameters
     Electronic devices, Novel Materials and Nanostructures
    • Poster Presentation
    • PP 013
    Revisiting carrier diffusion in GaN – ambipolar versus exciton diffusion
     Characterization, Optical devices
    • Poster Presentation
    • PP 113
    Temperature-dependence of the generation volume – prerequisite for quantitative analysis of electron-beam-induced signals
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 129
    Nature of nonradiative recombination at threading dislocations in GaN
     Characterization, Optical devices
    • Poster Presentation
    • PP 354
    Study on the thermal stability of sputtered metallic TiN thin films used for self-assembly of AlN nanowires at 1200 °C
     Characterization, Growth
    • Poster Presentation
    • PP 377
    Impact of strain relaxation and surface recombination on the photoluminescence of ordered arrays of thin, top-down fabricated GaN/(In,Ga)N nanowires
     Characterization, Novel Materials and Nanostructures
    • Poster Presentation
    • PP 347
    Applying line-of-sight quadrupole mass spectrometry to monitor in situ changes in In incorporation during epitaxy of thick (In,Ga)N films
     Characterization, Growth
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