Professor James S. Speck

Weitere Beteiligungen

• 11.10.2022

  17:30 – 17:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 103

  The influence of V-defects and random alloy fluctuations on the performance of red InGaN MQW LEDs

   Characterization, Optical devices
• 11.10.2022

  • Poster Presentation
  • PP 223

  Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds

   Characterization, Optical devices
• 12.10.2022

  • Poster Presentation
  • PP 321

  Probing electron localization induced by intrinsic alloy disorder in InGaN/GaN quantum wells by scanning tunneling electroluminescence microscopy

   Characterization, Optical devices
• 12.10.2022

  17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 176

  Engineering of quantum barriers for efficient InGaN multiple quantum well high power LEDs

   Characterization, Novel Materials and Nanostructures
• 13.10.2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 202

  Improved wall-plug efficiency of III-Nitride tunnel junction Micro-Light-Emitting Diodes with AlGaN layer

   Novel Materials and Nanostructures, Optical devices