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Professor Yasufumi Fujiwara

Osaka University / JP

Osaka University

Invited Speaker

11.10.2022
08:30 – 09:00 25 Min. 5 Min.
Invited Talk
IT 15
Towards Next-Generation Micro-LED Displays Using Eu-Doped GaN

Weitere Beteiligungen

10.10.2022
14:30 – 14:45 12 Min. 3 Min.
Abstract Talk
AT 003
Visualization of excited-electron relaxation in InGaN quantum wells using time-resolved two-photon photoemission spectroscopy
Characterization, Optical devices
11.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 052
Monolithically-stacked tri-colored LEDs towards Micro-LED display with Eu-doped GaN and InGaN layers
Growth, Optical devices
11.10.2022
Poster Presentation
PP 292
Control of highly efficient Eu luminescence centers and drastic intensity enhancement in Eu-doped GaN grown on semipolar (20-21) GaN
Growth, Optical devices
12.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 177
Improved Q-factors (> 10000) of III-Nitride-based two-dimensional photonic crystal cavities in the red region
Novel Materials and Nanostructures, Optical devices
14.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 256
Second harmonic generation of 230 nm DUV light from transverse quasi-phase-matched −c-AlN/+c-AlN channel waveguide
Novel Materials and Nanostructures, Optical devices