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Benjamin McEwen

College of Nanoscale Science and Engineering / US

College of Nanoscale Science and Engineering

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 020
Photoluminescence from Be-doped GaN grown by metalorganic chemical vapor deposition
Characterization
10.10.2022
Poster Presentation
PP 088
Novel III-Nitride p-GaN photocathodes on selectiva area grown Ga- and N-polar pyramidal microstructures
Growth, Optical devices
11.10.2022
Poster Presentation
PP 287
Be-doped Al_xGa_1-xN grown by metalorganic chemical vapor deposition
Growth, Novel Materials and Nanostructures
12.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 172
Defect-mediated diffusion of implanted Mg in GaN – suppressing dopant redistribution by sequential thermal and microwave annealing
Characterization, Electronic devices