Abstract text (incl. figure legends and references)

Atomic-resolution transmission electron microscopy (TEM) is the technique of choice for the structural characterization of two-dimensional (2D) materials on the atomic scale. With spherical and chromatic aberration correction (CC/CS-correction), low acceleration voltages of 20-80 kV still offer atomic resolution while allowing for good control over electron-beam-induced modifications in the sample [1]. In contrast to TEM experiments which are usually performed with the 2D materials being freely suspended on TEM-grids, many other measurement techniques such as electrical transport measurements require the 2D materials to be placed on other substrates [2]. This makes linking electron microscopy with complementary characterization techniques very challenging, as the samples may need to be transferred from a TEM grid to another substrate after TEM investigation. In our work, we aim for a controlled defect production in TEM experiments to engineer quantum dots (QDs) for subsequent electrical transport measurements. These QDs are considered as promising platforms for quantum information storage [3].

We exfoliate transition metal dichalcogenides (TMDs) on polyvinyl-alcohol coated SiO2 and transfer them to TEM grids. Following this, we use the TEM for engineering and simultaneous imaging of defects. When transferring the TMD flakes back to an arbitrary substrate, we observe that the exposure to the electron beam makes the flakes adhere more strongly to the TEM grid. This challenge is solved by the here presented "reverse transfer" preparation technique. We show proof-of-principle experiments in which we transfer electron exposed TMD flakes from a TEM grid to arbitrary substrates and measure the produced defects in photoluminescence and transport measurements.

[1] M. Linck et al., Phys. Rev. Lett. (2016)

[2] T. Dvir et al., Phys. Rev. Lett. (2019)

[3] J. M. Elzerman et al, Nature 430, 431-435 (2004)