Session – Optical Devices
UV laser

Programme

• 16:15 – 16:45 25 Min. 5 Min.

  • Invited Talk
  • IT 44

  Progress in AlGaN-based UV-B laser diodes fabricated on sapphire substrates

  • Professor Motoaki Iwaya (Meijo University / JP)
• 16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 184

  Continuous-wave lasing of AlGaN-based UVC laser diode by current injection

  • Dr. Maki Kushimoto (Nagoya University / JP)

   Characterization, Optical devices
• 17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 185

  Analysis on mesa stripe related defects in UVC laser diode

  • Dr. Maki Kushimoto (Nagoya University / JP)

   Characterization, Optical devices
• 17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 186

  Effect of reducing dislocation and pit-hillock densities in AlGaN templates on UV-B laser diode performances

  • Eri Matsubara (Meijo University / JP)

   Growth, Optical devices
• 17:30 – 17:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 187

  Improvement of performance for UV-B laser diodes by using dielectric multilayer distributed Bragg reflector

  • Ayumu Yabutani (Meijo University / JP)

   Characterization, Optical devices
• 17:45 – 18:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 188

  Effects of Mg doping into the core layer in AlGaN deep-UV LD structures

  • Yuri Itokazu (RIKEN / JP)

   Electronic devices, Optical devices