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Abstract Talk
AT 086

High-frequency characterization of ferroelectric gate stacks on GaN-based HEMTs for RF switch applications

Appointment

Date: 11/10/2022

Time: 15:45 – 16:00

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Session

High frequency II

Topics

Electronic devices
Novel Materials and Nanostructures

Authors

Professor Patrick Fay (University of Notre Dame / US), Govind Bajpai (University of Notre Dame / US), Hansheng Ye (University of Notre Dame / US), Adam Jonsson (University of Notre Dame / US), Nivedhita Venkatesan (University of Notre Dame / US), Chunlei Wu (University of Notre Dame / US)