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  • Abstract Talk
  • AT 138

Vertical GaN transistor with semi-insulating channel

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Rome

Session

Substrates, field effects, transport

Topic

  • Electronic devices

Authors

P. Šichman (Inst. Electrical Eng., Slovak Academy of Sciences / SK), R. Stoklas (Inst. Electrical Eng., Slovak Academy of Sciences / SK), Stanislav Hasenöhrl (Inst. Electrical Eng., Slovak Academy of Sciences / SK), Dr. Dagmar Gregušová (Inst. Electrical Eng., Slovak Academy of Sciences / SK), M. Ťapajna (Inst. Electrical Eng., Slovak Academy of Sciences / SK), B. Hudec (Inst. Electrical Eng., Slovak Academy of Sciences / SK), Š. Haščík (Inst. Electrical Eng., Slovak Academy of Sciences / SK), T. Hashizume (Hokkaido Uni. / JP), Dr. Ján Kuzmik (Inst. Electrical Eng., Slovak Academy of Sciences / SK)

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