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  • Poster Presentation
  • PP 163

MOVPE of GaN layer with double-layered voids on rough SiC/Si substrate formed using Si surface carbonization

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Dr. Momoko Deura (The University of Tokyo / JP), Tomonori Oku (The University of Tokyo / JP), Dr. Takeshi Momose (The University of Tokyo / JP), Professor Yukihiro Shimogaki (The University of Tokyo / JP)

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