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  • Poster Presentation
  • PP 331

Performance analysis of nitride-based polarization-induced doping with silicon-delta doping in β-Ga2O3 HEMTs

Professor Trupti Ranjan Lenka
National Institute of Technology Silchar / IN

Appointment

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Topic Electronic devices

Session

Electronic devices

Topics

  • Electronic devices
  • Novel Materials and Nanostructures

Authors

Dr. Rajan Singh (MLR Institute of Technology, Hyderabad / IN), G. Purnachandra Rao (National Institute of Technology Silchar / IN), Professor Trupti Ranjan Lenka (National Institute of Technology Silchar / IN), Dr. Nour El. I. Boukortt (Kuwait College of Science and Technology, Doha / KW), Professor Hieu P. T. Nguyen (New Jersey Institute of Technology Newark / US)

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