Prof. Dr. Jincheng Zhang

Further involvements

• 11/10/2022

  13:15 – 15:30

  • Poster Presentation
  • PP 137

  Improvement of the thermal performance of the GaN-on-Si RF transistors by introducing a GNOI structure

   Electronic devices
• 11/10/2022

  13:15 – 15:30

  • Poster Presentation
  • PP 147

  Strained channel AlN/GaN heterostructures homoepitaxially grown on AlN-on-sapphire template by plasma-assisted molecular beam epitaxy

   Electronic devices, Growth
• 11/10/2022

  13:15 – 15:30

  • Poster Presentation
  • PP 131

  High-performance E-Mode p-Channel GaN FinFETs on silicon substrate

   Electronic devices
• 11/10/2022

  13:15 – 15:30

  • Poster Presentation
  • PP 133

  High-breakdown-voltage (> 3000 V) and low-power-dissipation Al_0.3Ga_0.7N/GaN/Al_0.1Ga_0.9N double-heterostructure HEMTs with ohmic / Schottky hybrid drains and Al₂O₃/SiO₂ passivation

   Electronic devices
• 12/10/2022

  12:00 – 14:00

  • Poster Presentation
  • PP 333

  Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors with ⁶⁰Co γ-irradiation

   Characterization, Electronic devices
• 12/10/2022

  12:00 – 14:00

  • Poster Presentation
  • PP 332

  GaN/AlN resonant tunneling diode oscillator

   Electronic devices, Novel Materials and Nanostructures