Professor Gaudenzio Meneghesso

Further involvements

• 10/10/2022

  • Poster Presentation
  • PP 004

  Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials

   Characterization, Electronic devices
• 10/10/2022

  • Poster Presentation
  • PP 023

  Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters

   Characterization, Optical devices
• 11/10/2022

  17:45 – 18:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 100

  Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs

   Characterization, Electronic devices
• 12/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 139

  Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements

   Characterization, Optical devices
• 12/10/2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 141

  Reliability of commercial UV-C LEDs for disinfection purposes

   Characterization, Optical devices
• 12/10/2022

  • Poster Presentation
  • PP 388

  Modeling the EQE spectral shape of InGaN-GaN multi-quantum wells solar cells

   Electronic devices, Optical devices
• 12/10/2022

  • Poster Presentation
  • PP 392

  Effects of generation and relocation of defects during the aging process of InGaN-based multi quantum well light emitting diodes

   Electronic devices, Optical devices
• 14/10/2022

  09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 234

  Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier

   Characterization, Electronic devices
• 14/10/2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 236

  Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications

   Characterization, Electronic devices