Hiroki Kobayashi

Further involvements

• 11/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 065

  Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering

   Characterization, Electronic devices