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IWN 2022
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Zachary Engel
Georgia Institute of Technology / US
Georgia Institute of Technology
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11/10/2022
Poster Presentation
PP 271
Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics
Characterization, Growth
12/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 116
Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth
Electronic devices, Growth
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Characterization, Growth
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