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Marcin Kryśko

Further involvements

10/10/2022
14:15 – 14:30 12 Min. 3 Min.
Abstract Talk
AT 002
Origin of anisotropy in partially relaxed InGaN layers and the procedure for strain state analysis
Characterization, Growth
10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
12/10/2022
Poster Presentation
PP 393
High temperature growth of InGaN in plasma assisted molecular beam epitaxy – a path towards improvement of quantum efficiency
Growth, Optical devices
12/10/2022
Poster Presentation
PP 334
Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films
Characterization, Electronic devices